Progress Toward Nanowire Device Assembly Technology-猫眼课题宝

DOI：

10.5772/39521

发表时间：

2010-02

期刊：

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通讯作者：

中科院分区：

其他

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作者：

Yanbo Li;J. Delaunay

自20世纪60年代以来，集成电路(IC)的发展一直遵循摩尔定律。为了维持摩尔定律，一方面，微电子行业的技术人员正试图将光刻技术推向极限，以制造更小尺寸的器件。极紫外、电子束、纳米压印或其他光刻技术已被开发为传统光学光刻的候选替代技术(Gwyn等人，1998；Vieu等人，2000；Chou等人，1996)。另一方面，技术人员也在探索芯片3D集成的第三维度(Brega，2004)。虽然光刻技术和3D集成技术的进步可以使IC行业在未来十年里与摩尔定律并驾齐驱，但在那个时期结束时，我们将面临的问题正变得显而易见。作为集成电路构件的纳米线/纳米管的出现将给未来的集成电路产业带来根本性的变化，并提供摩尔定律的延续。除了在逻辑电路中的应用外，纳米线在高灵敏生物/化学/光子传感器和探测器中作为传感元件也有着非常广阔的应用前景。纳米线通常通过气-液-固(VLS)法(Wagner&Ellis，1964)、气-固(VS)法(Zhang等人，1999)、电化学沉积纳米孔模板(Sander等人，2002)和溶液生长(Govender等人，2002)来生长。在过去的20年里，人们以相对较低的成本生产出了各种成分的纳米线，并精确控制了包括结构、尺寸、缺陷和掺杂在内的参数。纳米线器件，如场效应晶体管(FETs)(Ju等人，2007)、单病毒检测器(Patolsky等人，2004)、pH传感器(Cui等人，2001)、气体传感器(Zhang等人，2004)和光电探测器(SOCI等人，2007)已被证明具有比薄膜同类器件更好的性能，甚至显示出通过薄膜技术从未实现过的新特性。然而，目前的纳米线器件大多局限于单个器件的演示，不足以实现低成本的大规模生产。最终，成本和产量将决定纳米线设备能否进入市场。开发具有成本效益的手段，将纳米线大规模集成到工作装置中，对于纳米技术的繁荣至关重要。在这一章中，我们重点介绍了纳米线器件组装技术的进展，这可能有助于未来纳米线器件的大规模生产。通常，存在两种用于从纳米线制造器件的策略，即，将预先生长的纳米线转移到具有

The advancement of integrated circuits (ICs) has been following Moore’s Law well since 1960s. For the sustaining of Moore’s Law, technologists in the microelectronics industry are, on one hand, trying to push lithography technology to the limit for making devices with smaller length scales. Extreme ultraviolet, e-beam, nanoimprint or other lithography technologies have been developed as candidate replacement technologies for the conventional optical lithography (Gwyn et al., 1998; Vieu et al., 2000; Chou et al., 1996). On the other hand, technologists are also exploring the third dimension for the 3D integration of chips (Baliga, 2004). Although the advancement of lithography technologies and 3D integration technology can keep the IC industry abreast of Moore’s Law for the next decade, the problems we will face at the end of that period are becoming visible. The emerging of nanowires/nanotubes as building blocks of ICs will bring fundamental changes to the future IC industry and offer continuance of Moore’s Law. Besides the applications in logic circuits, nanowires have very promising applications as sensing elements in highly sensitive bio/chemical/photon sensors and detectors. Nanowires are commonly grown by vapor-liquid-solid (VLS) process (Wagner & Ellis, 1964), vapor-solid (VS) process (Zhang et al., 1999), electrochemical deposition into nanoporous templates (Sander et al., 2002), and solution growth (Govender et al., 2002). In the past 20 years, nanowires of a diverse range of compositions have been produced at a relatively low cost with precisely controlled parameters including structure, size, defect, and doping. Nanowire devices such as field effect transistors (FETs) (Ju et al., 2007), single virus detector (Patolsky et al., 2004), pH sensor (Cui et al., 2001), gas sensors (Zhang et al., 2004), and photodetectors (Soci et al., 2007) have been demonstrated to show superior performance than their thin-film counterparts or even exhibit novel properties that have never been achieved by thin-film technology. However, most of the nanowire devices are limited to the demonstration of single device, not adequate for production on a large scale at low cost. Ultimately, cost and yield will decide whether nanowire devices find their way into market. Developing cost-effective means to integrate nanowires into working devices on large scales is essential for the prosperity of nanotechnology. In this chapter, we focus on progress toward nanowire device assembly technologies, which may benefit for the mass production of nanowire devices in the future. Generally, two strategies exist for the fabrication of devices from nanowires, namely, transfer pre-grown nanowires onto a surface with

Progress Toward Nanowire Device Assembly Technology

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