Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces
Effects of Nitridation on 4H-SiC MOSFETs Fabricated on Various Crystal Faces
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DOI：
10.1109/ted.2012.2236333
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发表时间：
2013-03-01
影响因子：
3.1
通讯作者：
Kimoto, Tsunenobu
中科院分区：
文献类型：
--
作者：
Nanen, Yuichiro;Kato, Muneharu;Kimoto, Tsunenobu
研究了一氧化氮 (NO) 和一氧化二氮 (N2O) 退火对 (0001)、(000 (1) over bar) 和 (11 (2) over bar0) 面上制造的 4H-SiC 金属氧化物半导体场效应晶体管 (MOSFET) 的影响。与 (0001) (29-37 cm(2)/V.s) 和 (000 (1) over bar) (39-46 cm(2)/V.s) 上的 MOSFET 相比，(11 (2) over bar0) 上的 MOSFET 表现出高沟道迁移率 (108 cm(2)/V.s)。 MOSFET 特性根据氮化退火期间发生的氧化和晶面进行讨论。
Effects of nitric oxide (NO) and nitrous oxide (N2O) annealing on 4H-SiCmetal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on the (0001), (000 (1) over bar), and (11 (2) over bar0) faces are investigated. MOSFETs on (11 (2) over bar0) exhibited high channel mobility (108 cm(2)/V . s) compared to those on (0001) (29-37 cm(2)/V . s) and (000 (1) over bar) (39-46 cm(2)/V . s). The MOSFET characteristics are discussed in terms of oxidation taking place during the nitridation annealing and crystal faces.