Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation
Microwave noise performance of AlGaN-GaN HEMTs with small DC power dissipation
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DOI：
10.1109/led.2002.803766
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发表时间：
2002-12
影响因子：
4.9
通讯作者：
J. Moon;M. Micovic;A. Kurdoghlian;P. Janke;P. Hashimoto;W. Wong;L. McCray;C. Nguyen
中科院分区：
文献类型：
--
作者：
J. Moon;M. Micovic;A. Kurdoghlian;P. Janke;P. Hashimoto;W. Wong;L. McCray;C. Nguyen
我们报告的低微波噪声性能的离散AlGaN-GaN HEMT在直流功耗的GaAs基低噪声FET相媲美。在1V源漏（SD）偏压和97 mW/mm的直流功耗下，最小噪声系数（NF/sub min/）分别达到0.75 dB（10 GHz）和1.5 dB（20 GHz）。观察到40 V的器件击穿电压。在0.15-/spl mu/m栅长的GaN HEMT中，在1.5 /spl mu/m的较短SD间距下获得了在小DC功率水平下的低微波噪声性能和高击穿电压。相比之下，具有2 /spl mu/m SD间距的NF/sub min/在10 GHz时大0.2 dB。
We report low microwave noise performance of discrete AlGaN-GaN HEMTs at DC power dissipation comparable to that of GaAs-based low-noise FETs. At 1-V source-drain (SD) bias and DC power dissipation of 97 mW/mm, minimum noise figures (NF/sub min/) of 0.75 dB at 10 GHz and 1.5 dB at 20 GHz were achieved, respectively. A device breakdown voltage of 40 V was observed. Both the low microwave noise performance at small DC power level and high breakdown voltage was obtained with a shorter SD spacing of 1.5 /spl mu/m in 0.15-/spl mu/m gate length GaN HEMTs. By comparison, NF/sub min/ with 2 /spl mu/m SD spacing was 0.2 dB greater at 10 GHz.