Silicon Integrated THz Comb Radiator and Receiver for Broadband Sensing and Imaging Applications
Silicon Integrated THz Comb Radiator and Receiver for Broadband Sensing and Imaging Applications
复制标题
用于宽带传感和成像应用的硅集成太赫兹梳状辐射器和接收器
DOI：
10.1109/tmtt.2021.3105436
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发表时间：
2021
影响因子：
4.3
通讯作者：
A. Babakhani
中科院分区：
文献类型：
--
作者：
Sam Razavian;A. Babakhani
本文介绍了一种用于传感和成像的全集成太赫兹(THz)梳状/脉冲辐射器和宽带频率梳状外差接收器。该芯片组采用GlobalFoundries 90-nm SiGe BiCMOS工艺制造。梳状辐射器利用p-i-n二极管尖端反向恢复来产生太赫兹频率梳/脉冲。辐射脉冲的重复频率被锁定在一个稳定的片外光源上，该光源可以调整到高达15 GHz。通过使用低相位噪声的片外信号源而不是片上振荡器，实现了低相位噪声和高频率稳定度。在10千赫的偏移频率下，405千兆赫音频的相位噪声为−82dBc。利用VDISAX模块，测量的EIRP值分别为−11、−15和−36 dBm，频率分别为405千兆赫、500千兆赫和750千兆赫，辐射音调的范围从220千兆赫到1.1太赫兹。此外，还提出了一种采用肖特基势垒二极管无源混频器的太赫兹频率梳状探测器。该探测器使用宽带梳作为本振，通过调节本振梳的间距从100 MHz的S频率调整到15 GHz，分辨率为2 Hz，从而实现了对毫米波/太赫兹频段任意频谱的外差探测。该接收芯片的频率范围为220~500 GHz，在270 GHz、405 GHz和495 GHz下的测试噪声分别为24.5、36和44分贝。此外，还展示了使用辐射器和接收器芯片的双梳技术，有望为双梳传感应用提供紧凑、低成本的解决方案。辐射器和接收器芯片分别消耗40 mW和38 mW的直流功率。
This article presents a fully integrated terahertz (THz) comb/pulse radiator and a broadband frequency-comb heterodyne receiver for sensing and imaging applications. The chipset is fabricated in the GlobalFoundries 90-nm SiGe BiCMOS process. The comb radiator utilizes p-i-n diode sharp reverse recovery to generate THz frequency comb/pulses. The repetition rate of the radiated pulses is locked to a stable off-chip source, which can be adjusted to as high as 15 GHz. By using a low-phase noise off-chip source rather than an on-chip oscillator, low phase noise and high-frequency stability are achieved. The phase noise of 405-GHz tone is −82 dBc at a 10-kHz offset frequency. The radiated tones are characterized from 220 GHz up to 1.1 THz using VDI SAX modules with the measured EIRP of −11, −15, and −36 dBm at 405, 500, and 750 GHz, respectively. In addition, a THz frequency comb detector using a Schottky barrier diode passive mixer is presented. The detector uses a broadband comb as LO for heterodyne detection of any arbitrary spectrum in mm-wave/THz band by adjusting the spacing of the LO comb from 100 s of MHz up to 15 GHz with a resolution of 2 Hz. The receiver chip is characterized from 220 up to 500 GHz with the measured NF of 24.5, 36, and 44 dB at 270, 405, and 495 GHz, respectively. Moreover, a dual-comb technique using the radiator and receiver chips is demonstrated, promising a compact low-cost solution for dual-comb sensing applications. The radiator and receiver chips consume a dc power of 40 and 38 mW, respectively.