Development of wide-dynamic range readout system of silicon detector from 20keV to 4GeV
Development of wide-dynamic range readout system of silicon detector from 20keV to 4GeV
复制标题
20keV至4GeV宽动态范围硅探测器读出系统的研制
DOI:
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复制
发表时间:
2008
期刊:
影响因子:
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通讯作者:
S.Nishimura
中科院分区:
文献类型:
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作者:
N.Uematsu;S.Nishimura