Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy
Graphene nanoribbons with hBN passivated edges grown by high-temperature molecular beam epitaxy
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DOI：
10.1088/2053-1583/acdefc
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发表时间：
2023-06
期刊：
影响因子：
5.5
通讯作者：
J. Bradford;T. Cheng;T. James;A. Khlobystov;C. Mellor;Kenji Watanabe;T. Taniguchi;S. Novikov;P. Beton
中科院分区：
文献类型：
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作者：
J. Bradford;T. Cheng;T. James;A. Khlobystov;C. Mellor;Kenji Watanabe;T. Taniguchi;S. Novikov;P. Beton
石墨烯和六方氮化硼（hBN）在横向异质结构中的集成提供了一种通过电子的量子限制或在界面处引入新的电子和磁状态来广泛地设计材料特性的途径。在这项工作中，我们展示了横向异质外延生长的石墨烯纳米带（GNRs）钝化hBN使用高温分子束外延（HT-MBE）生长石墨烯在定向hBN沟槽形成异位催化纳米粒子蚀刻。高分辨率原子力显微镜（AFM）显示，GNR从蚀刻的hBN边缘外延生长，并合并形成由hBN钝化的GNR网络。使用导电原子力显微镜，我们探测纳米带的纳米尺度的电学性质，并观察在石墨烯/hBN界面，这携带hBN钝化GNR设备的潜在的传输特性的影响谷间散射引起的准粒子干涉图案。
Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement of electrons or introduction of novel electronic and magnetic states at the interface. In this work we demonstrate lateral heteroepitaxial growth of graphene nanoribbons (GNRs) passivated by hBN using high-temperature molecular beam epitaxy (HT-MBE) to grow graphene in oriented hBN trenches formed ex-situ by catalytic nanoparticle etching. High-resolution atomic force microscopy (AFM) reveals that GNRs grow epitaxially from the etched hBN edges, and merge to form a GNR network passivated by hBN. Using conductive AFM we probe the nanoscale electrical properties of the nanoribbons and observe quasiparticle interference patterns caused by intervalley scattering at the graphene/hBN interface, which carries implications for the potential transport characteristics of hBN passivated GNR devices.