Characterization of an AlGaN/GaN two-dimensional electron gas structure
Characterization of an AlGaN/GaN two-dimensional electron gas structure
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AlGaN/GaN 二维电子气结构的表征
DOI：
10.1063/1.371869
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
J. Speck
中科院分区：
文献类型：
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作者：
A. Saxler;P. Debray;R. Perrin;S. Elhamri;W. Mitchel;C. Elsass;I. Smorchkova;B. Heying;E. Haus;P. Fini;J. Ibbetson;S. Keller;Pierre M. Petroff;S. Denbaars;U. Mishra;J. Speck
在蓝宝石衬底上通过有机金属气相外延生长的GaN层上通过分子束外延沉积了AlxGa 1 −xN/GaN二维电子气结构（x=0.13）。非对称倒易晶格点的X射线衍射图证实了薄AlGaN层与厚GaN层的相干应变。讨论了用X射线衍射法计算AlGaN层中铝摩尔分数的方法。霍尔效应测量给出了10 K时的电子浓度为5.1×1012 cm−2，迁移率为1.9×104 cm 2/V s。 迁移率谱分析表明，在低温下的单载流子传输和可忽略不计的平行传导。由Shubnikov-de哈斯磁电阻振荡确定的薄层载流子浓度与霍尔数据吻合得很好。根据Shubnikov-de哈斯振荡幅度的温度依赖性，确定电子有效质量为0.215±0.006 m ~ 0。量子寿命大约是一...
An AlxGa1−xN/GaN two-dimensional electron gas structure with x=0.13 deposited by molecular beam epitaxy on a GaN layer grown by organometallic vapor phase epitaxy on a sapphire substrate was characterized. X-ray diffraction maps of asymmetric reciprocal lattice points confirmed that the thin AlGaN layer was coherently strained to the thick GaN layer. Methods for computing the aluminum mole fraction in the AlGaN layer by x-ray diffraction are discussed. Hall effect measurements gave a sheet electron concentration of 5.1×1012 cm−2 and a mobility of 1.9×104 cm2/V s at 10 K. Mobility spectrum analysis showed single-carrier transport and negligible parallel conduction at low temperatures. The sheet carrier concentrations determined from Shubnikov–de Haas magnetoresistance oscillations were in good agreement with the Hall data. The electron effective mass was determined to be 0.215±0.006 m0 based on the temperature dependence of the amplitude of Shubnikov–de Haas oscillations. The quantum lifetime was about one...