Evidence of field induced nucleation in phase change memory
Evidence of field induced nucleation in phase change memory
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DOI：
10.1063/1.2917583
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发表时间：
2008-04-28
影响因子：
4
通讯作者：
Karpov, V. G.
中科院分区：
文献类型：
--
作者：
Karpov, I. V.;Mitra, M.;Karpov, V. G.
相变存储器中开关的实验数据证明了其潜在的成核机制与场相关的成核势垒。类似于标准成核，当条件不够有利时，切换发生在指数级长的延迟时间之后，例如，成核势垒不低或温度不够高。开关统计被发现是一致的成核机制以及。概述了成核开关的理论模型。(c)2008年美国物理学会。
Experimental data on switching in phase change memory testify in favor of its underlying nucleation mechanism with field dependent nucleation barrier. Similar to the standard nucleation, switching occurs after exponentially long delay time when the conditions are not favorable enough, e.g., the nucleation barrier not low or the temperature not high enough. The switching statistics is found to be consistent with the nucleation mechanism as well. A theoretical model of nucleation switching is outlined. (c) 2008 American Institue of Physics.