Understanding the release of helium atoms from nanochannel tungsten: a molecular dynamics simulation
Understanding the release of helium atoms from nanochannel tungsten: a molecular dynamics simulation
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了解氦原子从纳米通道钨中的释放:分子动力学模拟
DOI:
10.1088/1741-4326/ab14c7
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发表时间:
2019-06
期刊:
影响因子:
3.3
通讯作者:
Deng Huiqiu
中科院分区:
文献类型:
--
作者:
Wei Guo;Ren Feng;Fang Jingzhong;Hu Wangyu;Gao Fei;Qin Wenjing;Cheng Tao;Wang Yongqiang;Jiang Changzhong;Deng Huiqiu
The design of highly radiation-tolerant plasma-facing materials (PFMs) is of great importance for fusion reactors. Our recent experiments have shown that nanochannel tungsten (W) films have clearly superior radiation tolerance properties. In the present work, helium clustering and release from nanochannel tungsten were studied by molecular dynamics simulations. The effects of temperature and vacancy concentration on the helium release from a tungsten cylinder were investigated. Our results show that nanochannel W that consists of thin W cylinders releases He atoms more quickly than bulk W with flat surfaces, thus greatly reducing the He concentration and suppressing the formation and growth of He bubbles, which leads to increased radiation tolerance. Moreover, the microstructural changes due to increasing He fluence are smaller in nanochannel W than those in bulk W. Although vacancies in nanochannel W will trap He atoms, the nanochannel W also has a stronger tendency to stabilize helium retention than bulk W. The mechanism of helium release from nanochannel W was also examined. The results reported here are beneficial for guiding future work in the design of radiation resistant PFMs.
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DOI:
10.1016/b978-0-12-780621-1.50005-8
发表时间:
1988
期刊:
--
影响因子:
--
作者:
J. Ziegler
通讯作者:
J. Ziegler
影响因子:
3.3
作者:
El-Atwani, O.;Gonderman, Sean;Allain, J. P.
通讯作者:
Allain, J. P.
影响因子:
3.1
作者:
M. Shimada;A. Costley;G. Federici;K. Ioki;A. Kukushkin;V. Mukhovatov;A. Polevoi;M. Sugihara
通讯作者:
M. Shimada;A. Costley;G. Federici;K. Ioki;A. Kukushkin;V. Mukhovatov;A. Polevoi;M. Sugihara
影响因子:
3.1
作者:
El-Atwani, O.;Nathaniel, J. E., II;Taheri, M. L.
通讯作者:
Taheri, M. L.
影响因子:
3.1
作者:
Bolt, H;Barabash, V;Sato, K
通讯作者:
Sato, K