Time-resolved cathodoluminescence of Mg-doped GaN
Time-resolved cathodoluminescence of Mg-doped GaN
复制标题
掺镁 GaN 的时间分辨阴极发光
DOI：
10.1063/1.3000383
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
J. Christen
中科院分区：
文献类型：
--
作者：
A. Fischer;S. Srinivasan;F. Ponce;B. Monemar;F. Bertram;J. Christen
通过皮秒时间分辨阴极发光光谱分析了镁浓度为 1018 和 1019 cm-3 的 GaN 薄膜的光学性质。观察到 ~3.45 和 ~3.27 eV 附近的两个发光带强度随着 Mg 浓度的增加而增加。它们已被确定为分别与受体结合激子和供体-受体对（DAP）跃迁相关。在低温 (~4 K) 下获取的时间分辨阴极发光光谱表明，DAP 峰 (3.27 eV) 的寿命以及其在~3.19 eV 处的第一个纵向光学声子复制品的寿命随着 Mg 浓度的增加而缩短。这些峰的重组动力学不同，强烈表明存在可能与 Mg 有关的潜在宽发射带。 © 2008 美国物理研究所。
The optical properties of GaN films doped with magnesium concentrations of the order of 1018 and 1019 cm-3 have been analyzed by picosecond time-resolved cathodoluminescence spectroscopy. Two luminescence bands in the vicinity of ~3.45 and ~3.27 eV are observed to increase in intensity with Mg concentration. They have been identified as related to acceptor-bound exciton and donor-acceptor pair (DAP) transitions, respectively. Time-resolved cathodoluminescence spectra, taken at low temperatures (~4 K), show that the lifetime of the DAP peak (3.27 eV) and of what appears to be its first longitudinal-optical phonon replica at ~3.19 eV decrease with increasing Mg concentration. These peaks differ in their recombination kinetics, strongly suggesting the existence of an underlying broad emission band which may be related to Mg. © 2008 American Institute of Physics.