Transport Phenomena in an Atmospheric-Pressure Townsend Discharge Fed by N2/N2O/HMDSO Mixtures
Transport Phenomena in an Atmospheric-Pressure Townsend Discharge Fed by N2/N2O/HMDSO Mixtures
复制标题
N2/N2O/HMDSO 混合物供给的大气压汤森放电中的输运现象
DOI：
10.1002/ppap.200700073
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发表时间：
2007
影响因子：
3.5
通讯作者：
F. Massines
中科院分区：
文献类型：
--
作者：
I. Enache;Hubert Caquineau;N. Gherardi;T. Paulmier;L. Maechler;F. Massines
研究了在大气压汤森放电条件下，在N2中添加少量HMDSO和N2 O的混合气体中，类SiO2薄膜生长过程中的主要机理。该方法包括通过流体动力学模型分析操作参数对生长速率曲线的影响。所提出的化学机理是由一个体积反应和一个表面反应构成的。这个简单的模型使我们能够假设以下机制中的现象控制膜生长过程：HMDSO解离N2（A3 + u）在含Si的自由基，自由基传输到表面，和表面活化过程等离子体。
This paper focuses on the understanding of the main mechanisms that participate in the growth process of an SiO 2 -like film in an atmospheric pressure Townsend discharge in N 2 with small ad-mixtures of HMDSO and N 2 O. The approach consists of analyzing the influence of operating parameters on the growth rate profile through a fluid dynamics model. The suggested chemical mechanism is constituted by one volume reaction and one surface reaction. This simple model enables us to assume which phenomena control the film growth process among the following mechanisms: HMDSO dissociation by N 2 (A 3 Σ + u ) in Si-containing radicals, radicals transport to the surface, and surface activation process by plasma.