From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors
From bulk to porous GaN crystal: precise structural control and its application in ultraviolet photodetectors
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从块状氮化镓晶体到多孔氮化镓晶体：精确结构控制及其在紫外光电探测器中的应用
DOI：
10.1039/c9tc04820k
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发表时间：
2019
影响因子：
6.4
通讯作者：
Xiaopeng Hao
中科院分区：
文献类型：
--
作者：
Ruixian Yu;Guodong Wang;Yongliang Shao;Yongzhong Wu;Shouzhi Wang;Gang Lian;Baoguo Zhang;Haixiao Hu;Lei Liu;Lei Zhang;Xiaopeng Hao
多孔GaN具有比表面积大、禁带宽度可调、光学性能优良等优点。在这里，我们开发了一种简单有效的方法，通过高温退火制备多孔GaN单晶。研究了不同退火温度对GaN多孔结构、晶体质量和光学性能的影响。总结了退火温度、时间与GaN多孔结构的关系模型。制作了一种基于多孔GaN的紫外光探测器。首次研究了多孔结构对GaN紫外光探测器性能的影响。我们发现适当的GaN多孔结构可以提高光电探测器的性能。已经提出了一种可能的性能增强机制。基于高性能和简单的制备工艺，多孔GaN晶体是一个很好的紫外光电探测器的候选者。
Porous GaN has many unique merits, such as a large specific surface area, adjustable bandgap and excellent optical performance. Here, we develop a simple and effective method for preparing porous GaN single crystals through high temperature annealing. The effects of different annealing temperatures on the porous structure, crystal quality and optical properties of GaN are investigated. The relationship model of annealing temperatures, times and GaN porous structures is summarized. An ultraviolet (UV) photodetector based on porous GaN is fabricated. The effects of porous structures on the performance of the GaN UV photodetector are investigated for the first time. We found that the appropriate GaN porous structure can improve the performance of the photodetector. A possible performance enhancement mechanism has been proposed. Based on the high performance and simple fabrication process, porous GaN crystal can be an excellent candidate for UV photodetectors.