InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application
InGaAs nano-pillar array formation on partially masked InP(111)B by selective area metal–organic vapour phase epitaxial growth for two-dimensional photonic crystal application
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DOI：
10.1088/0957-4484/14/10/303
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发表时间：
2003-10
期刊：
影响因子：
3.5
通讯作者：
M. Akabori;J. Takeda;J. Motohisa;T. Fukui
中科院分区：
文献类型：
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作者：
M. Akabori;J. Takeda;J. Motohisa;T. Fukui
我们报道了InGaAs纳米柱阵列在部分掩蔽的InP(111)B衬底上的选择性区金属-有机气相外延生长。该技术是一种非常有前途的方式，形成半导体二维光子晶体（2DPCs）适用于红外光纤通信。我们成功地在400 nm间距的掩膜基板上形成了具有垂直（110）面侧壁的均匀六边形2dpc。在高生长速率、长生长时间和窄开窗条件下，我们观察到高纵横比InGaAs纳米柱阵列的垂直生长增强和横向过度生长抑制。我们通过低温光致发光测量验证了InGaAs纳米柱阵列的红外发射。
We report on the selective area metal–organic vapour phase epitaxial growth of an InGaAs nano-pillar array on a partially masked InP(111)B substrate. This technique is very promising as a way to form semiconductor two-dimensional photonic crystals (2DPCs) suitable for infrared optical fibre communication. We successfully formed uniform hexagonal 2DPCs having vertical (110) facet sidewalls on 400 nm-pitch masked substrates. We observed vertical growth enhancement as well as the lateral overgrowth suppression for high aspect ratio InGaAs nano-pillar array formation under high growth-rate, long growth-time, and narrow window-opening conditions. We verified infrared emission from the InGaAs nano-pillar array by low-temperature photoluminescence measurement.