Engineering sulfur vacancies in basal plane of MoS2 for enhanced hydrogen evolution reaction
Engineering sulfur vacancies in basal plane of MoS2 for enhanced hydrogen evolution reaction
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MoS2基面设计硫空位以增强析氢反应
DOI：
10.1016/j.jcat.2020.05.042
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发表时间：
2020-11-01
影响因子：
7.3
通讯作者：
Yu, Yongsheng
中科院分区：
文献类型：
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作者：
Geng, Shuo;Yang, Weiwei;Yu, Yongsheng
在MoS 2的基面上设计硫空位是提高其催化活性的有效方法。然而，传统的方法仅对负载在基底（如Si/SiO晶片或碳纸）上的多层或单层MoS 2有效，这不适用于块状或商业MoS 2。在这项工作中，我们开发了一种简单而通用的化学还原方法，用于在MoS 2基面和额外的活性边缘位点中设计S-空位，这可以用来提高MoS 2的HER催化性能。优化的具有S-空位的MoS 2纳米片表现出优异的HER活性，在10 mA/cm（2）的大密度下具有190 mV的小过电位和54 mV decade（-1）的低Tafel斜率。此外，还实现了突出的电化学耐久性。这一发现为制备S空位激活二维过渡金属硫族化合物材料的基面提供了一种有效的策略。(C)2020爱思唯尔公司All rights reserved.
Engineering sulfur vacancies in the basal plane of MoS2 is an effective method to enhance its catalytic activity. However, the traditional methods are only effective for multilayer or monolayer MoS2 supported on the substrate (such as Si/SiO wafer or carbon paper), which are not applied in bulk or commercial MoS2. In this work, we developed a simple and general chemical reduction method for engineering S-vacancies in the MoS2 basal plane and additional active edge sites, which can be exploited to improve the HER catalytic performance of MoS2. The optimized MoS2 nanosheets with S-vacancies exhibit excellent HER activity with a small overpotential of 190 mV at large density of 10 mA/cm(2) and a low Tafel slope of 54 mV decade(-1). Moreover, prominent electrochemical durability was also achieved. This finding proposes an effective strategy to fabricating S-vacancies for activating basal plane of 2D transition metal chalcogenides materials. (C) 2020 Elsevier Inc. All rights reserved.