Observation on Volatile and Nonvolatile Magnetic Reversions Mediated by Electric Current in Highly Conductive Gd3Fe5O12

Observation on Volatile and Nonvolatile Magnetic Reversions Mediated by Electric Current in Highly Conductive Gd3Fe5O12
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高导 Gd3Fe5O12 中电流介导的挥发性和非挥发性磁反转的观察

DOI:
10.1021/acs.jpcc.2c00311
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发表时间:
2022
期刊:
The Journal of Physical Chemistry C
影响因子:
--
通讯作者:
Jifan Hu
Jifan Hu
中科院分区:
其他
文献类型:
--
作者:
Xue Ren;Liang Liu;Wei Huang;Shaoqing Ren;Jinru Si;Weikang Liu;Bin Cui;Bin Cheng;Hongwei Qin;Jifan Hu

文献摘要

相似文献

低能耗的磁开关是未来自旋电子学的关键。利用一系列电击穿工艺,我们成功地将电阻为>2×108Ω的绝缘体Gd3Fe5O12转变为电阻为∼400Ω的高导电性半导体。结合X射线光电子能谱、X射线衍射谱、能谱和密度泛函理论,我们提出Gd3Fe5O12电导的显著提高可能是由于Fe位中的稀银取代,从而显著抑制了Gd3Fe5O12的禁带宽度。在处理后的Gd3Fe5O12中,剩磁、矫顽场和饱和磁化强度等磁性能对电流高度敏感。更重要的是,在室温下以∼10-3A/cm2的超低密度电流处理的Gd3Fe5O12中观察到了非易失性和零场易失性磁化反转,这表明新型导电材料Gd3Fe5O12是实现灵活和低功耗磁性转换的一种有前途的候选材料。
Switching of magnetism with low energy consumption is the key for future spintronics. Utilizing a series of electrical break-down processes, we successfully convert the insulator Gd3Fe5O12with resistance >2 × 108Ω into a highly conductive semiconductor with a resistance of ∼400 Ω. Combining X-ray photoelectron spectroscopy, X-ray diffraction, energy-dispersive spectrometry, and density functional theory, we propose that dramatic enhancements of Gd3Fe5O12conductance may be due to the dilute Ag substitutions in Fe sites, which can significantly suppress the band gap of Gd3Fe5O12by >75%. In the processed Gd3Fe5O12, magnetic properties including residual magnetization, coercive field, and saturated magnetism are found to be highly sensitive to electric currents. More importantly, both nonvolatile and zero-field volatile magnetization reversions are observed in processed Gd3Fe5O12via applying an electric current with an ultralow density of ∼10–3A/cm2under room temperature, suggesting that the novel conductive Gd3Fe5O12is a promising candidate to achieve flexible and low-consumption switching of magnetism.