Nondestructive measurement of machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy
Nondestructive measurement of machining-induced amorphous layers in single-crystal silicon by laser micro-Raman spectroscopy
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DOI：
10.1016/j.precisioneng.2007.08.006
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发表时间：
2008-07-01
影响因子：
3.6
通讯作者：
Kuriyagawa, Tsunemoto
中科院分区：
文献类型：
--
作者：
Yan, Jiwang;Asami, Tom;Kuriyagawa, Tsunemoto
激光显微拉曼光谱被用于检测由金刚石工具精密加工的硅片，并将结果与透射电子显微镜结果进行了比较。研究发现，加工过程中产生了近表面非晶层，并且非晶层的厚度与非晶相和晶相的拉曼强度比之间存在很强的相关性。这一发现为利用激光显微拉曼光谱对半导体材料的亚表面损伤进行快速、廉价、无损和定量测量提供了可行性。通过实验研究了有效测量范围，并从双层材料模型的光散射和光吸收方面对检测极限进行了理论探讨。（c）2007爱思唯尔公司。保留所有权利。
Laser micro-Raman spectroscopy was used to examine silicon wafers precision machined by diamond tools, and the results were compared with transmission electronic microscopic results. It was found that near-surface amorphous layers were generated by machining and there was a strong correlation between the thickness of the amorphous layer and the Raman intensity ratio of the amorphous phase to the crystalline phase. This finding provides the feasibility of a fast, inexpensive, nondestructive and quantitative measurement approach for subsurface damages of semiconductor materials by using laser micro-Raman spectroscopy. The effective measurement range was experimentally investigated and the sensing limits were theoretically discussed from the aspect of light scattering and light absorption with a double-layer material model. (c) 2007 Elsevier Inc. All rights reserved.