Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography

Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography
复制标题

DOI:
10.1063/5.0144684
复制
发表时间:
2023-04-24
影响因子:
4
通讯作者:
Bonato, Cristian
Bonato, Cristian
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Bekker, Christiaan;Arshad, Muhammad Junaid;Bonato, Cristian

文献摘要

被引文献

相似文献

灰度光刻允许在与标准光刻完全兼容的过程中创建具有空间控制高度的微米级特征。在这里,使用结合灰度光刻和硬掩模技术的制造协议在碳化硅中演示了固体浸没透镜,以允许将半径为 5lm 的近半球形透镜蚀刻到基板中。通过研究碳化硅中单量子发射器的光学收集效率的增强,对透镜性能进行了基准测试。对于未注册到透镜中心的发射器,测量到增强了 4.461.0 倍,这与通过其他方法制造的设备一致。灰度硬掩模技术具有高度可重复性、可扩展性,并且与 CMOS 技术兼容,并且可以在光刻胶图案化后通过控制后续干法蚀刻的化学成分来调整器件纵横比。这些结果提供了一种可重复、低成本、高通量和工业相关的聚焦离子束铣削替代方案,用于为量子技术和微光子应用创建高纵横比、圆形微结构。 (C) 2023 作者。
Grayscale lithography allows the creation of micrometer-scale features with spatially controlled height in a process that is fully compatible with standard lithography. Here, solid immersion lenses are demonstrated in silicon carbide using a fabrication protocol combining grayscale lithography and hard-mask techniques to allow nearly hemispherical lenses of 5lm radius to be etched into the substrate. Lens performance was benchmarked by studying the enhancement obtained in the optical collection efficiency for single quantum emitters hosted in silicon carbide. Enhancement by a factor of 4.461.0 was measured for emitters not registered to the center of the lens, consistent with devices fabricated through other methods. The grayscale hard-mask technique is highly reproducible, scalable, and compatible with CMOS technology, and device aspect ratios can be tuned after resist patterning by controlling the chemistry of the subsequent dry etch. These results provide a reproducible, low-cost, high-throughput and industrially relevant alternative to focused ion beam milling for the creation of high-aspectratio, rounded microstructures for quantum technology, and microphotonic applications. (C) 2023 Author(s).