Shallow buried SiNx layers
Shallow buried SiNx layers
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DOI：
10.1063/1.373520
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发表时间：
2000-05
影响因子：
3.2
通讯作者：
L. Barbadillo;M. J. Hernández;M. Cervera;P. Rodriguez;J. Piqueras
中科院分区：
文献类型：
--
作者：
L. Barbadillo;M. J. Hernández;M. Cervera;P. Rodriguez;J. Piqueras
在30 keV的能量下进行了高剂量氮掺杂。在1200 °C的高温退火之后，形成主要由氮化硅组成的掩埋层，留下具有高比例的晶体硅的覆盖层。覆盖层和SiNx以下区域的晶格常数分别降低了0.13%和0.089%。替代N似乎是负责这种减少。
High dose nitrogen implantations have been performed at an energy of 30 keV. After high temperature annealing, 1200 °C, a buried layer composed mostly of silicon nitride is formed leaving an overlayer with a high fraction of crystalline silicon. The lattice constant of the overlayer and the region below the SiNx are reduced in 0.13% and 0.089%, respectively. The substitutional N seems to be responsible for this reduction.