First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting Oxides
First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting Oxides
复制标题
DOI：
10.1143/jjap.38.2675
复制
发表时间：
1998-09
影响因子：
1.5
通讯作者：
Masanori Sugiura;Kazuyuki Uragou;MakotoNoda Tachiki;Takeshi Kobayashi
中科院分区：
文献类型：
--
作者：
Masanori Sugiura;Kazuyuki Uragou;MakotoNoda Tachiki;Takeshi Kobayashi
我们制作了半导体氧化物p-i-n二极管，以探索氧化物材料中的少数载流子注入效应。二极管的组成为p-La 0. 85 Sr 0. 15 MnO 3/i-SrTiO 3/n-La 0. 05 Sr 0. 95 TiO 3。所有的氧化物层外延生长的Eclipse脉冲激光沉积方法（100）SrTiO 3衬底上。二极管表现出良好的整流性能，并从平带电容测量，我们得到的扩散电位约为0.2 V的这些二极管与计算结果一致。在较低的温度制度，空间电荷限制电流的属性是明显的，所产生的i-SrTiO 3层内的残留陷阱。反向电流主要是由于隧穿通过i-SrTiO 3层，显示在p-和n-氧化物层的耗尽区没有有意义的扩张。
We have fabricated semiconducting oxide p-i-n diodes in order to explore minority carrier injection effects in oxide materials. The diodes comprised p-La0.85Sr0.15MnO3/i-SrTiO3/n-La0.05Sr0.95TiO3. All oxide layers were grown epitaxially by the eclipse pulsed laser deposition method on (100) SrTiO3 substrates. The diodes showed good rectifying properties, and from the flat-band capacitance measurement, we obtained a diffusion potential of about 0.2 V for these diodes in agreement with the calculated results. In the lower temperature regime, the space-charge-limited-current property was pronounced, arising from residual traps inside the i-SrTiO3 layer. The backward current was mostly due to tunneling through the i-SrTiO3 layer, showing no meaningful expansion of depletion regions in both p- and n-oxide layers.