Composition control and thickness dependence of {100}-oriented epitaxial BiCoO3–BiFeO3 films grown by metalorganic chemical vapor deposition
Composition control and thickness dependence of {100}-oriented epitaxial BiCoO3–BiFeO3 films grown by metalorganic chemical vapor deposition
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DOI：
10.1063/1.3073824
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发表时间：
2009-03
影响因子：
3.2
通讯作者：
S. Yasui;M. Nakajima;H. Naganuma;S. Okamura;K. Nishida;Takashi Yamamoto;T. Iijima;M. Azuma;H. Morioka;K. Saito;M. Ishikawa;Tomoaki Yamada;H. Funakubo
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文献类型：
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作者：
S. Yasui;M. Nakajima;H. Naganuma;S. Okamura;K. Nishida;Takashi Yamamoto;T. Iijima;M. Azuma;H. Morioka;K. Saito;M. Ishikawa;Tomoaki Yamada;H. Funakubo
采用金属有机化学气相沉积法制备了xBiCoO3 -(1−x)BiFeO3薄膜。虽然膜的成分随沉积温度的变化而变化，但在700℃时，可以通过改变输入源气体的成分来调节膜的成分。调整沉积时间可改变0.16BiCoO3-0.84BiFeO3薄膜厚度。在（100）SrTiO3和（100）cSrRuO3∥(100)SrTiO3衬底上生长的0.16BiCoO3-0.84BiFeO3薄膜，随着薄膜厚度的减小，晶体对称性从方面体转变为四边形，这表明晶体的四面体和方面体结构边界的x值随薄膜厚度的变化而变化。
xBiCoO3–(1−x)BiFeO3 films were deposited by metalorganic chemical vapor deposition. Although the film composition changed with deposition temperature, the composition could be adjusted by varying the input source gas composition at 700 °C. Moreover, adjusting the deposition time could change 0.16BiCoO3–0.84BiFeO3 film thickness. The crystal symmetry changed from rhombohedral to tetragonal as the film thickness decreased for 0.16BiCoO3–0.84BiFeO3 films grown on both (100)SrTiO3 and (100)cSrRuO3∥(100)SrTiO3 substrates, implying that the x value of the crystal symmetry boundaries between the tetragonal and rhombohedral structures changes with film thickness.