Photoelectrical and microphysical properties of Sol-Gel derived IGZO thin films for printed TFTs
Photoelectrical and microphysical properties of Sol-Gel derived IGZO thin films for printed TFTs
复制标题
DOI：
10.1109/estc.2014.6962826
复制
发表时间：
2014-11
期刊：
影响因子：
--
通讯作者：
T. Matsuo;T. Sugahara;Y. Hirose;J. Jiu;S. Nagao;K. Suganuma;Jianying He;Zhiliang Zhang
中科院分区：
文献类型：
--
作者：
T. Matsuo;T. Sugahara;Y. Hirose;J. Jiu;S. Nagao;K. Suganuma;Jianying He;Zhiliang Zhang
我们使用溶胶-凝胶法制备用于TFT器件应用的堆叠层透明导电IGZO薄膜。本研究的重点是所得薄膜的性能，以评估溶液方法取代目前的超高真空技术来制造薄膜及其所用器件的能力。在本文中，我们描述了我们的高品质的溶液沉积技术：开发溶胶-凝胶工艺，生产TCO半导体层薄膜的表面粗糙度在同一顺序的超高真空沉积形成的薄膜。结果，实现了良好的导电性和光学透射率。结果表明，基于溶液的方法显示出作为超高真空方法的替代品来生产TCO薄膜的前景。
We fabricated stack layer transparent conductive IGZO thin films for TFT device applications using a sol-gel method. This research focuses on the properties of the resulting thin films to evaluate the ability of solution methods to replace current ultra-high vacuum techniques to fabricate thin films and its used devices. In this paper, we describe our high quality solution deposited technique: developing a sol-gel process that produced TCO semiconductor layer films with surface roughness in the same order as that of films formed by ultra-high vacuum deposition. As a result, good electrical conductivity and optical transmittance were achieved. The results suggest that solution-based methods show promise as an alternative to ultra-high vacuum methods to produce TCO thin films.