Hot isostatic pressing of transition metal ions into chalcogenide laser host crystals
Hot isostatic pressing of transition metal ions into chalcogenide laser host crystals
复制标题
将过渡金属离子热等静压成硫族化物激光主晶体
DOI：
10.1364/ome.6.003339
复制
发表时间：
2016
影响因子：
2.8
通讯作者：
G. Cook
中科院分区：
文献类型：
--
作者：
R. Stites;S. McDaniel;Jacob O. Barnes;D. Krein;J. Goldsmith;S. Guha;G. Cook
本文介绍了一种利用热等静压（HIP）将过渡金属离子扩散到硫系激光基质晶体中的技术。在HIP室中处理之前，将铬金属的薄层溅射到硒化锌和硫化锌晶体的表面上。的透射率，激发态寿命，和扩散速率测量各种掺杂剂浓度。效率，光谱输出，和调谐数据也测量的Cr：ZnSe激光器。5.48 × 10 - 8 cm 2/s的扩散速率比文献中报道的其他技术快两个数量级，并且低于140 pm的测量线宽比市售晶体的典型线宽小350倍以上。Fe：ZnSe，Co：ZnSe和Ni：ZnSe的初步结果也被提出。
This paper describes a technique using a hot isostatic pressing (HIP) for the diffusion of transition metal ions into chalcogenide laser host crystals. Thin layers of chromium metal are sputtered onto the surface of zinc selenide and zinc sulfide crystals before treatment in a HIP chamber. The transmissivities, excited state lifetimes, and diffusion rates are measured for various dopant concentrations. Efficiency, spectral output, and tuning data are also measured for a Cr:ZnSe laser. The diffusion rate of 5.48 × 10−8 cm2/s is two orders of magnitude faster than other techniques reported in the literature, and the sub 140 pm measured linewidth is more than 350 times smaller than what is typical of commercially available crystals. Preliminary results for Fe:ZnSe, Co:ZnSe, and Ni:ZnSe are presented as well.