Optimization of Pt-based spin-Hall-effect spintronic devices
Optimization of Pt-based spin-Hall-effect spintronic devices
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DOI：
10.1063/1.4799492
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发表时间：
2013-04
影响因子：
4
通讯作者：
H. Ulrichs;V. Demidov;S. Demokritov;W. Lim;J. Melander;N. Ebrahim-Zadeh;S. Urazhdin
中科院分区：
文献类型：
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作者：
H. Ulrichs;V. Demidov;S. Demokritov;W. Lim;J. Melander;N. Ebrahim-Zadeh;S. Urazhdin
我们通过实验研究了通过优化 Pt 层厚度和添加反铁磁自旋下沉层来改善基于坡莫合金/Pt 双层的自旋霍尔效应器件特性的途径。我们通过实验确定了 Pt 中的自旋扩散长度，并表明 Pt 厚度可以减小至 2 nm，而不会因自旋累积效应而导致器件特性下降，这为显着降低所需驱动电流提供了可能性。我们还表明，添加自旋下沉层会导致器件效率对 Pt 厚度的非单调依赖性。
We study experimentally the routes to improve the characteristics of the spin-Hall-effect devices based on permalloy/Pt bilayers by optimization of the Pt layer thickness and by the addition of an antiferromagnetic spin-sinking layer. We experimentally determine the spin-diffusion length in Pt and show that Pt thickness can be reduced down to 2 nm without degradation of the device characteristics caused by the spin accumulation effects, which provides possibilities for significant reduction of the required driving currents. We also show that the addition of a spin-sinking layer results in a non-monotonic dependence of device efficiency on the Pt thickness.