Quantum defects by design
Quantum defects by design
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DOI：
10.1515/nanoph-2019-0211
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发表时间：
2019-11-01
期刊：
影响因子：
7.5
通讯作者：
Fu, Kai-Mei C.
中科院分区：
文献类型：
--
作者：
Bassett, Lee C.;Alkauskas, Audrius;Fu, Kai-Mei C.
宽带隙晶体中的光学活性点缺陷是量子信息技术的主要构建模块，包括量子处理器，中继器，模拟器和传感器。虽然缺陷和杂质在所有材料中普遍存在，但某些材料中的选择缺陷配置具有相干电子和核量子态，这些量子态可以在固态器件中光学和电子地寻址，在某些情况下甚至在室温下。从历史上看，量子点缺陷的研究一直局限于一个相对较小的主机材料和缺陷系统。在这篇文章中，我们考虑了识别新材料中缺陷的潜力，无论是推进量子科学中的已知应用还是实现全新的能力。我们建议，在原则上，它应该是可能的，以扭转历史的方法，这是部分基于偶然发现，以设计量子缺陷与所需的性能适合于特定的应用。我们讨论了实现这一目标的道路上的最大障碍，特别是那些与理论预测，材料生长和加工，以及实验表征。
Optically active point defects in wide-bandgap crystals are leading building blocks for quantum information technologies including quantum processors, repeaters, simulators, and sensors. Although defects and impurities are ubiquitous in all materials, select defect configurations in certain materials harbor coherent electronic and nuclear quantum states that can be optically and electronically addressed in solid-state devices, in some cases even at room temperature. Historically, the study of quantum point defects has been limited to a relatively small set of host materials and defect systems. In this article, we consider the potential for identifying defects in new materials, either to advance known applications in quantum science or to enable entirely new capabilities. We propose that, in principle, it should be possible to reverse the historical approach, which is partially based on accidental discovery, in order to design quantum defects with desired properties suitable for specific applications. We discuss the biggest obstacles on the road towards this goal, in particular those related to theoretical prediction, materials growth and processing, and experimental characterization.