Low temperature catalytic formation of Si‐based metal–oxide–semiconductor structure
Low temperature catalytic formation of Si‐based metal–oxide–semiconductor structure
复制标题
硅基金属氧化物半导体结构的低温催化形成
DOI：
10.1063/1.363284
复制
发表时间：
1996
影响因子：
3.2
通讯作者：
Y. Todokoro
中科院分区：
文献类型：
--
作者：
H. Kobayashi;T. Yuasa;Y. Nakato;K. Yoneda;Y. Todokoro
硅基金属氧化物半导体结构在低至300 °C的温度下使用铂（Pt）层的催化活性形成。X射线光电子能谱和透射电子显微镜测量表明，在300 °C下对105 nm-Pt/101 nm-化学氧化物/Si（100）SiO2器件进行热处理，氧化物层的厚度增加到4-4.5 nm，氧化物层存在于Pt层和Si衬底之间，但不在Pt表面上。研究发现，薄的化学氧化层有效地防止了热处理过程中Pt的扩散和硅化物的形成。在干氧和湿氧中进行热处理可获得几乎相同的氧化物厚度。在Pt表面产生的氧原子（或氧离子）被认为是通过Pt和氧化硅层的扩散物种。
Si‐based metal–oxide–semiconductor structure is formed at temperatures as low as 300 °C using the catalytic activity of the platinum (Pt) layer. X‐ray photoelectron spectroscopy and transmission electron micrography measurements show that heat treatments of the ∼5 nm‐Pt/∼1 nm‐chemical oxide/Si(100)〉 devices at 300 °C increase the thickness of the oxide layer to 4–4.5 nm and the oxide layer is present between the Pt layer and the Si substrate, but not on the Pt surface. It is found that the thin chemical oxide layer effectively prevents the Pt diffusion and the silicide formation during the heat treatments. Heat treatments in dry‐ and wet‐oxygen result in nearly the same oxide thickness. Oxygen atoms (or oxygen ions) produced at the Pt surface are suggested to be a diffusing species through the Pt and silicon oxide layers.