Enhanced magnetic and bolometric sensitivity of La0.7Ce0.3MnO3 thin films due to 200 MeV Ag ion irradiation
Enhanced magnetic and bolometric sensitivity of La0.7Ce0.3MnO3 thin films due to 200 MeV Ag ion irradiation
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200 MeV Ag 离子辐照增强 La0.7Ce0.3MnO3 薄膜的磁和辐射热灵敏度
DOI:
10.1063/1.1941479
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发表时间:
2005
期刊:
影响因子:
--
通讯作者:
S. Malik
中科院分区:
文献类型:
--
作者:
R. Choudhary;Ravi Kumar;S. Patil;S. Husain;J. Srivastava;S. Malik
The parameters for bolometric performance [temperature coefficient of resistance (TCR) and noise value] and magnetic sensitivity of pulsed-laser-deposited thin films of La0.7Ce0.3MnO3 and their dependence on the 200 MeV Ag ions irradiation are studied. It is observed that the TCR value and magnetic sensitivity can be tuned in different temperature regime by controlling the irradiation fluence value. It turns out that irradiation with a fluence value of 5×1010ions∕cm2 changes the TCR value in a positive direction and enhances magnetic sensitivity at room temperature, while irradiation with a fluence value of 1×1012ions∕cm2 enhances these parameters at 200 K. The observations are explained on the basis of structural and electrical transport modifications induced by the 200 MeV Ag ion irradiation.