An Organic-Based Diode–Memory Device With Rectifying Property for Crossbar Memory Array Applications
An Organic-Based Diode–Memory Device With Rectifying Property for Crossbar Memory Array Applications
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DOI：
10.1109/led.2009.2017387
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发表时间：
2009-04
影响因子：
4.9
通讯作者：
E. Yeow Hwee Teo;C. Zhang;S. Lim;E. Kang;D. Chan;Chunxiang Zhu
中科院分区：
文献类型：
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作者：
E. Yeow Hwee Teo;C. Zhang;S. Lim;E. Kang;D. Chan;Chunxiang Zhu
研究了一种具有双稳态存储功能和高整流比的有机基二极管存储器件。该二极管存储器件是通过将有机基二极管组件与聚合物存储组件串联来制造的。有机基二极管存储器件性能良好，是一种可靠的整流存储器件，实现了良好的通断电流比106和高整流比103。此外，本文还利用电导模型对整流存储器件的电导机理进行了研究。这种基于有机材料的二极管存储器件在无源矩阵交叉开关聚合物存储阵列中的应用前景非常广阔。
An organic-based diode-memory device that has a bistable memory function and a high rectification ratio has been studied. The diode-memory device is fabricated by incorporating an organic-based diode component in series with a polymer memory component. The organic-based diode-memory device performs well as a reliable rectifying memory device, achieving an excellent on/off current ratio of 106 and a high rectification ratio of 103. The conduction models are also fitted to study the proposed conductivity mechanism of the rectifying memory device. The demonstrated organic-based diode-memory device is very promising for use in a passive matrix crossbar polymer memory array.