Sb-Doped S/D Ultrathin body Ge-On-insulator nMOSFET fabricated by improved Ge condensation process
Sb-Doped S/D Ultrathin body Ge-On-insulator nMOSFET fabricated by improved Ge condensation process
复制标题
采用改进的 Ge 冷凝工艺制造的 Sb 掺杂 S/D 超薄体 Ge-On-insulator nMOSFET
DOI：
10.1109/ted.2014.2350457
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
M. Takenaka and S. Takagi
中科院分区：
文献类型：
--
作者：
W.-K. Kim;K. Kuroda;T. Osada;M. Hata;M. Takenaka and S. Takagi
报道了采用优化的Ge凝聚工艺和Sb固相扩散制备的绝缘体上锗（GOI）反型nMOSFET。通过优化氧化温度和在Ge凝聚工艺配方中插入退火工艺以增强混合，实现了空穴浓度小于1017 cm-3的GOI结构。系统地分析了不同氧化温度和引入退火工艺对GOI体内空穴浓度的影响。高掺杂n+源极/漏极区通过Sb固相扩散掺杂在650°C下从旋涂玻璃形成在16 nm厚的GOI层中。在所制备的nMOSFET中观察到104的高ION/IOFF比。反型GOI nMOSFET的峰值电子迁移率为107 cm ~ 2/Vs。
We report the demonstration of ultrathin Ge-on-insulator (GOI) inversion-type nMOSFETs, fabricated by the optimized Ge condensation technique and solid-phase diffusion of Sb. The GOI structures with low hole concentration of 1017cm-3or less are realized by optimizing oxidation temperature and inserting annealing process for enhancement of intermixing in the Ge condensation process recipe. The hole concentration in the GOI body has been systematically analyzed with different oxidation temperature and insertion of annealing process. Highly doped n+source/drain regions are formed in 16-nm-thick GOI layers by Sb solid-phase diffusion doping from spin-on-glass at 650°C. The high ION/IOFFratio of 104 is observed in the fabricated nMOSFETs. The peak electron mobility of 107 cm2/Vs is obtained for the inversion-type GOI nMOSFETs.