IHP SiGe:C BiCMOS Technologies as a Suitable Backup Solution for the ATLAS Upgrade Front-End Electronics
IHP SiGe:C BiCMOS Technologies as a Suitable Backup Solution for the ATLAS Upgrade Front-End Electronics
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DOI：
10.1109/tns.2009.2021835
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发表时间：
2009-08
影响因子：
1.8
通讯作者：
S. Díez;M. Lozano;G. Pellegrini;I. Mandić;D. Knoll;B. Heinemann;M. Ullán
中科院分区：
文献类型：
--
作者：
S. Díez;M. Lozano;G. Pellegrini;I. Mandić;D. Knoll;B. Heinemann;M. Ullán
在这项研究中，我们提出了三种不同的SiGe：C BiCMOS技术的高性能微电子创新（IHP）的应用在超大型强子对撞机（S-LHC）的辐射硬度研究的结果。我们在这些技术的双极部分上进行了伽马、中子和质子辐照，以考虑电子器件上的电离和原子位移损伤。结果表明，IHP BiCMOS技术的晶体管在ATLAS升级实验的内部探测器（ID）中达到预期的辐射水平后仍能正常工作。这些技术是在S-LHC的ATLAS升级实验中构成前端芯片模拟部分的候选技术之一。
In this study we present the results of radiation hardness studies performed on three different SiGe:C BiCMOS technologies from Innovation for High Performance Microelectronics (IHP) for their application in the Super-Large Hadron Collider (S-LHC). We performed gamma, neutron and proton irradiations on the bipolar section of these technologies, in order to consider ionization and atomic displacement damage on electronic devices. Results show that transistors from the IHP BiCMOS technologies remain functional after the radiation levels expected in the inner detector (ID) of the ATLAS Upgrade experiment. These technologies are one of the candidates to constitute the analog part of the Front-End chip in the ATLAS-upgrade experiment, in the S-LHC.