Thermal conductivity of diamond films deposited at low surface temperatures
Thermal conductivity of diamond films deposited at low surface temperatures
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低表面温度下沉积的金刚石薄膜的导热性
DOI：
10.1557/jmr.2006.0286
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发表时间：
2006
影响因子：
2.7
通讯作者：
H. H. Chen
中科院分区：
文献类型：
--
作者：
D. Das;Raj N. Singh;S. Chattopadhyay;H. H. Chen
采用微波等离子体增强化学气相沉积系统，在370 °C-530 °C的低表面沉积温度下，在p型Si（100）和n型SiC（6 H）衬底上沉积了多晶金刚石薄膜，并对沉积过程中的表面温度进行了监测和控制。在530 °C的表面温度下，在SiC衬底上获得了高达1.3 μm/h的生长速率。用行波法测量了低表面温度沉积薄膜的室温面内热导率。在370 °C下沉积的金刚石薄膜的晶粒尺寸在3 ~ 7 μm之间，其热导率高达6.5W/cm·K，远高于单晶SiC在室温下的热导率。在较高温度下沉积在Si和SiC单晶上的金刚石膜显示出甚至更高的热导率，为11-17 W/cm-K。这些薄膜的结构和微观结构的特征在于通过X射线衍射，扫描电子显微镜，和拉曼光谱，并与测得的热导率。
Polycrystalline diamond films are deposited on p-type Si (100) and n-type SiC (6H) substrates at the low surface deposition temperatures of 370 °C–530 °C using a microwave plasma-enhanced chemical vapor deposition system in which the surface temperature during deposition is monitored and controlled. A very high growth rate up to 1.3 μm/h on SiC substrate at 530 °C surface temperature is obtained. The room temperature in-plane thermal conductivity of the low-surface-temperature–deposited thin films is measured by a traveling wave method. The diamond films of grain sizes between 3 and 7 μm and deposited at 370 °C showed a high thermal conductivity value of ∼6.5 W/cm-K, which is much higher than the single crystal SiC thermal conductivity value at room temperature. Diamond films deposited on Si and SiC single crystals at higher temperatures showed even higher thermal conductivities of 11–17 W/cm-K. The structure and microstructure of these films are characterized by x-ray diffraction, scanning electron microscopy, and Raman spectroscopy, and are related to measured thermal conductivities.