Resistive Random Access Memory (ReRAM) Based on Metal Oxides
Resistive Random Access Memory (ReRAM) Based on Metal Oxides
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DOI：
10.1109/jproc.2010.2070830
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发表时间：
2010-12-01
影响因子：
20.6
通讯作者：
Shima, Hisashi
中科院分区：
文献类型：
--
作者：
Akinaga, Hiroyuki;Shima, Hisashi
电阻式随机存取存储器（ReRAM）是一种新兴的非易失性存储器，电子效应和电化学效应在其非易失性功能中起着重要的作用。首先，我们对这一领域的研究进行了简要的历史概述。我们还提供了技术概述和划时代的成就，随后介绍了当前对双极和单极ReRAM操作的理解。最后，我们总结了ReRAM技术在迈向超越2x -nm一代非易失性存储器和所谓的超越互补金属氧化物半导体（CMOS）器件时所面临的挑战。
In this paper, we review the recent progress in the resistive random access memory (ReRAM) technology, one of the most promising emerging nonvolatile memories, in which both electronic and electrochemical effects play important roles in the nonvolatile functionalities. First, we provide a brief historical overview of the research in this field. We also provide a technological overview and the epoch-making achievements, followed by an account of the current understanding of both bipolar and unipolar ReRAM operations. Finally, we summarize the challenges facing the ReRAM technology as it moves toward the beyond-2X-nm generation of nonvolatile memories and the so-called beyond complementary metal-oxide-semiconductor (CMOS) device.