Growth of high purity large synthetic diamond crystals
Growth of high purity large synthetic diamond crystals
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DOI：
10.1016/s0925-9635(99)00042-4
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发表时间：
1999-08-01
影响因子：
4.1
通讯作者：
Welch, DL
中科院分区：
文献类型：
--
作者：
Burns, RC;Hansen, JO;Welch, DL
本文回顾了钻石研究实验室的成就，在那里，过去用温度梯度法合成了重量高达25ct的大型含氮型Ib晶体。进一步的工作集中在通过在用于这一生长过程的合成池中引入吸氮剂来减少合成钻石中的氮点缺陷。这使得能够合成重量高达4.6克拉、含氮量从0.01至0.4ppm的大型Ia型钻石。通过在合成池中加入硼，也可以合成重量高达5.1克拉的大型IIb钻石。由短波紫外线产生的长寿命磷光的存在，将这些人造钻石与天然材料区分开来。(C)1999 Elsevier Science S.A.保留所有权利。
This paper reviews achievements at the Diamond Research Laboratory where, in the past, large, nitrogen-containing type Ib crystals of up to 25 ct in weight have been synthesised by the temperature gradient method. Further work has focused on reducing the nitrogen point defect incorporation in synthetic diamond by introducing nitrogen getters into the synthesis cell used for this growth process. This has enabled the synthesis of large type Ia diamonds up to 4.6 ct in weight, containing nitrogen from 0.01 to 0.4 ppm. Large type IIb diamonds, up to 5.1 ct in weight, have also been synthesised by adding boron to the synthesis cell. The presence of long-lived phosphorescence, generated by short-wavelength ultraviolet light, distinguishes these synthetic diamonds from natural material. (C) 1999 Elsevier Science S.A. All rights reserved.