Stability of Silicon Carbide Particle Detector Performance at Elevated Temperatures
Stability of Silicon Carbide Particle Detector Performance at Elevated Temperatures
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DOI：
10.1109/tns.2015.2475421
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发表时间：
2015-09
影响因子：
1.8
通讯作者：
Y. Abubakar;A. Lohstroh;P. Sellin
中科院分区：
文献类型：
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作者：
Y. Abubakar;A. Lohstroh;P. Sellin
以50 μm外延层的4h -碳化硅肖特基器件为材料，在300 ~ 500 K的温度范围内，以50 K的间隔测试了器件的α光谱性能和电流稳定性。从温度相关电阻率测量中提取活化能为5.98±0.64 meV。肖特基势垒高度从300 K时的1.33 eV下降到500 K时的1.11 eV，理想因子从300 K时的1.17增加到500 K时的1.79。反偏置漏电流在较高温度下稳定得更快。当温度高达500k时，电荷收集效率在90%以上。在恒定电压和温度下采集24小时的脉冲高度光谱在前8小时内随时间的推移而改善，并在其余采集时间内保持稳定。在低于50 V的偏置电压下，α光谱的峰宽随着温度的升高而显著减小，这表明在这些条件下，即使在我们设置的500k下，泄漏电流也不是限制因素。到目前为止，该装置在长时间运行中表现出合理的稳定性，并突出了在强辐射介质中的可能应用。
The alpha spectroscopy performance and electric current stability of 4H-silicon carbide Schottky devices with 50 μm epitaxial layer was examined at temperatures between 300 to 500 K at 50 K intervals. An activation energy of 5.98 ±0.64 meV was extracted from temperature dependent resistivity measurements. The Schottky barrier height decreases from 1.33 eV at 300 K to 1.11 eV at 500 K and the ideality factor increases from 1.17 at 300 K to 1.79 at 500 K. The reverse bias leakage currents stabilizes faster at higher temperatures. The charge collection efficiency is above 90% for temperatures up to 500 K. Pulse height spectra collected for 24 hours at constant voltage and temperature show improvements with time within the first 8 hours and remained stable for the remainder of the acquisition time. The peak width of the alpha spectra reduces significantly with increasing temperature at applied bias voltages below 50 V, which indicates that leakage currents are not the limiting factor in those conditions even at 500 K in our set up. So far, the devices indicate reasonable stability for extended periods of operation and highlight possible applications in harsh radiation media.