Fluorinated aminoalkoxide and ketoiminate indium complexes as MOCVD precursors for In2O3 thin film deposition.
Fluorinated aminoalkoxide and ketoiminate indium complexes as MOCVD precursors for In2O3 thin film deposition.
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氟化氨基醇盐和酮亚胺化铟络合物作为用于 In2O3 薄膜沉积的 MOCVD 前体。
作者：
Tsung;Y. Chi;Shu;Chao;A. Carty;L. Scoles;K. Udachin
报道了两种不同类型的三甲基铟（InMe（3））配合物的合成。第一类具有通式[InMe（2）（amak）]（2），其中（amak）H是一系列螯合氨基醇配体HOC（CF（3））（2）CH（2）NHR的缩写，R =（CH（2））（2）OMe（1），Me（2），和Bu（t）（3），以及HOC（CF（3））（2）CH（2）NMe（2）（4）;而第二种类型的配合物由[InMe（2）（keim）]（5）说明，其中（keim）H是结构式为O=C（CF（3））CH（2）C（CF（3））=NCH（2）CH（2）NMe（2）的三齿酮亚胺配体。使用单晶X射线衍射研究确定2和5的固态结构。对于氨基醇盐配合物2-4，已经建立了固态二聚In（2）O（2）核结构的存在，其中氨基片段位于醇盐配体的反式，其分子排列与酮亚胺配合物5观察到的扭曲的三角双锥几何结构相反。此外，VT NMR研究2揭示了一个快速的二聚体到单体的平衡和同时断裂的N-->在配位相互作用，提供两个相互转化的异构体相关的具有N-Me取代基的反式或顺式配置。对于配合物2和5，在400-500 ℃的温度下成功地进行了In（2）O（3）薄膜的沉积，使用O（2）作为载气以诱导氧化铟沉积并抑制薄膜中存在的碳杂质。扫描电子显微镜（SEM）显示的表面形貌。通过X射线光电子能谱（XPS）和卢瑟福背散射（RBS）方法检测了这些膜的原子组成，而X射线衍射研究（XRD）证实了沿（222）面沿着择优取向的形成。
The syntheses of two distinctive types of indium complex derived from trimethylindium (InMe(3)) are reported. The first kind has a generalized structural formula [InMe(2)(amak)](2), where (amak)H is an abbreviation for a series of chelating amino alcohol ligands HOC(CF(3))(2)CH(2)NHR, R = (CH(2))(2)OMe (1), Me (2), and Bu(t) (3), as well as HOC(CF(3))(2)CH(2)NMe(2) (4); while the second type of complex is illustrated by [InMe(2)(keim)] (5), for which (keim)H is a tridentate ketoimine ligand of structural formula O=C(CF(3))CH(2)C(CF(3))=NCH(2)CH(2)NMe(2). The solid-state structures of 2 and 5 were determined using single crystal X-ray diffraction studies. For the aminoalkoxide complexes 2-4, the existence of dimeric In(2)O(2) core structures in the solid state has been established with the amino fragment located trans to the alkoxide ligands, in a molecular arrangement which is in contrast to the distorted, trigonal bipyramidal geometry observed for the ketoiminate complex 5. Moreover, VT NMR studies of 2 revealed a rapid dimer-to-monomer equilibration and simultaneous rupture of the N-->In dative interaction, affording two interconvertible isomers related by having the N-Me substituents in either trans or cis dispositions. For complexes 2 and 5, deposition of In(2)O(3) thin films was successfully conducted at temperatures 400-500 degrees C, using O(2) as the carrier gas to induce indium oxide deposition and to suppress carbon impurity present in the thin film. Scanning electron micrographs (SEMs) revealed the surface morphologies. The atomic composition of these films was examined by both X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering (RBS) methods, while X-ray diffraction studies (XRD) confirmed the formation of a preferred orientation along the (222) planes.