Electrical properties of highly disordered bismuth-based composites
Electrical properties of highly disordered bismuth-based composites
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高度无序铋基复合材料的电性能
DOI：
10.1103/physrevb.63.073106
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发表时间：
2001
影响因子：
3.7
通讯作者：
J. Meyer
中科院分区：
文献类型：
--
作者：
F. Brochin;B. Lenoir;C. Bellouard;H. Scherrer;I. Vurgaftman;J. Meyer
一个显着的经典尺寸效应的输运性能中观察到散装铋-二氧化硅纳米复合材料的载流子平均自由程的晶粒尺寸的限制的结果。从磁场和温度依赖的磁输运测量，载流子迁移率和密度进行了探讨，在这些高度无序的系统。结果清楚地表明，从那些散装单晶铋的能带参数的修改。
A pronounced classical size effect in the transport properties was observed in bulk bismuth-silica nanocomposites as a result of the limitation of the carrier mean free path by the grain size. From field-and temperature-dependent magnetotransport measurements, carrier mobility and density were explored in these highly disordered systems. The results clearly show modifications in the band parameters from those of bulk single-crystalline Bi.