Low temperature epitaxial growth of In0.25Ga0.75N on lattice-matched ZnO by pulsed laser deposition
Low temperature epitaxial growth of In0.25Ga0.75N on lattice-matched ZnO by pulsed laser deposition
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DOI：
10.1063/1.2206883
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发表时间：
2006-06
影响因子：
3.2
通讯作者：
A. Kobayashi;J. Ohta;H. Fujioka
中科院分区：
文献类型：
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作者：
A. Kobayashi;J. Ohta;H. Fujioka
我们使用脉冲激光沉积在低衬底温度下在几乎晶格匹配的 ZnO (0001´) 衬底上生长了 In0.25Ga0.75N 薄膜，该衬底具有原子级平坦的表面。我们发现，InGaN 表面具有阶梯状和阶梯状结构，可以在较低的衬底温度下生长。我们还发现，即使在室温 (RT) 下，InGaN 也会以逐层模式生长，同时从第一个单层开始保持笔直的台阶和原子级平坦的平台。这种现象与 ZnO 上 GaN 的 RT 外延情况形成鲜明对比，在前几层的阶梯结构上观察到大量缺陷。这种差异可归因于 InGaN 和 ZnO 之间较小的晶格失配。
We have grown In0.25Ga0.75N films on nearly lattice-matched ZnO (0001¯) substrates with atomically flat surfaces at low substrate temperatures using pulsed laser deposition. We have found that InGaN having a stepped and terraced structure on its surface grows at low substrate temperatures. We have also found that InGaN grows in the layer-by-layer mode, even at room temperature (RT), while maintaining straight steps and atomically flat terraces from the first monolayer. This phenomenon exhibits a singular contrast to the case of RT epitaxy of GaN on ZnO, where a considerable number of defects are observed on the stepped structure of the first several layers. This difference can be attributed to a smaller lattice mismatch between InGaN and ZnO.