Spin transfer experiments on (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As tunnel junctions -: art. no. 035303
Spin transfer experiments on (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As tunnel junctions -: art. no. 035303
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DOI：
10.1103/physrevb.73.035303
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发表时间：
2006-01-01
影响因子：
3.7
通讯作者：
Faini, G
中科院分区：
文献类型：
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作者：
Elsen, M;Boulle, O;Faini, G
我们展示并讨论了在柱状 (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As 隧道结上进行的电流感应磁开关实验的结果。开关电流的符号证实了 (Ga,Mn)As 中价带空穴和 Mn 原子的相反自旋极化。相对于纯金属结构中的自旋转移实验，开关电流的大小要小两个数量级，这主要可以通过(Ga,Mn)As的小磁化来解释。一个惊人的结果是在偏置电压值下观察到电流感应磁化强度切换，此时结的磁阻几乎降至零。这就提出了关于电压感应磁振子激励对磁阻和电流感应磁化开关所起的不同作用的有趣问题。
We present and discuss the results of current induced magnetic switching experiments performed on pillar-shaped (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As tunnel junctions. The sign of the switching currents confirms the opposite spin polarizations of the valence band holes and Mn atoms in (Ga,Mn)As. With respect to spin transfer experiments in purely metallic structures, the magnitude of the switching currents is smaller by two orders of magnitude, which can be explained mainly by the small magnetization of (Ga,Mn)As. A striking result is the observation of current induced magnetization switching at values of the bias voltage for which the magnetoresistance of the junction has dropped to almost zero. This raises interesting questions on the different role played by voltage-induced magnon excitations on magnetoresistance and current-induced magnetization switching.