Progress in External Quantum Efficiency for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
Progress in External Quantum Efficiency for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
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III族氮化物基深紫外发光二极管外量子效率研究进展
DOI：
10.1002/pssa.201800815
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发表时间：
2019
影响因子：
2
通讯作者：
Zhang Zi Hui
中科院分区：
文献类型：
--
作者：
Chu Chunshuang;Tian Kangkai;Zhang Yonghui;Bi Wengang;Zhang Zi Hui
AlGaN基深紫外发光二极管（DUV LED）具有体积小、直流驱动、无环境污染等特点，它们现在正成为替代传统汞基灯管的优秀固态光源。然而，DUV LED目前受到差的外量子效率（EQE）的影响，这是由低的内量子效率（IQE）和非常不令人满意的光提取效率（LEE）引起的。在这项工作中，作者揭示了低EQE的潜在机制，并总结了迄今为止已采用的技术，以提高EQE。
AlGaN‐based deep ultraviolet light‐emitting diodes (DUV LEDs) are featured with small size, DC driving, no environmental contamination etc., and they are now emerging as the excellent solid‐state light source to replace the conventional mercury based light tubes. Nevertheless, the DUV LEDs are currently affected by the poor external quantum efficiency (EQE), which is caused by the low internal quantum efficiency (IQE) and the very unsatisfying light extraction efficiency (LEE). In this work, the authors disclose the underlying mechanism for the low EQE and summarize the technologies that have been adopted so far for enhancing the EQE.