Oxidation-induced defects in NiAl
Oxidation-induced defects in NiAl
复制标题
NiAl 中的氧化引起的缺陷
DOI：
10.1080/14786437308221008
复制
发表时间：
1973
期刊：
影响因子：
--
通讯作者：
R. Wasilewski
中科院分区：
文献类型：
--
作者：
H. Fraser;M. Loretto;R. Smallman;R. Wasilewski
用透射电子显微镜研究了以前在缓慢冷却的NiAl晶体中发现的空洞和空位位错环的退火现象（Fraser，洛雷托，Smallman和Wasilewski，1971）。据观察，这两种类型的缺陷生长在退火过程中，即使它是在真空中进行约10−7埃和详细的行为是一致的空位引入表面氧化。在生长的单晶中出现的空洞，以及在淬火的NiAl中形成的空位型环（Ball和Smallman 1968），现在可以解释为表面氧化，而不是NiAl中空位形成的低能量。
Abstract The annealing of voids and vacancy dislocation loops previously found in slowly cooled crystals of NiAl (Fraser, Loretto, Smallman and Wasilewski, 1971) has been studied using transmission electron microscopy. It is observed that both types of defect grow during annealing even when it is carried out in a vacuum of about 10−7 torr and that the detailed behaviour is consistent with vacancy introduction by surface oxidation. The occurrence of voids in as-grown single crystals, and the formation of vacancy-type loops in quenched NiAl (Ball and Smallman 1968) may now be interpreted in terms of surface oxidation rather than a low energy of formation of vacancies in NiAl.