Thin films of SmCo5 with very high perpendicular magnetic anisotropy

Thin films of SmCo5 with very high perpendicular magnetic anisotropy
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DOI:
10.1063/1.1829792
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发表时间:
2004-12
影响因子:
4
通讯作者:
J. Sayama;K. Mizutani;T. Asahi;T. Osaka
J. Sayama;K. Mizutani;T. Asahi;T. Osaka
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
J. Sayama;K. Mizutani;T. Asahi;T. Osaka

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通过引入Cu ScinTi双层衬底,并在溅射沉积过程中控制衬底温度,制备了具有极高垂直磁各向异性的SmCo 5薄膜。在优化条件下,磁各向异性常数达到4.0× 107 ergscincm ~ 3,垂直于膜面方向的矫顽力和剩磁比分别为12.0kOe和1。高垂直磁各向异性归因于c轴的高度择优取向; SmCo 5(002)反射的摇摆曲线的半峰全宽为3.1°。
Thin films of SmCo5 with extraordinarily high perpendicular magnetic anisotropy were prepared by introducing a Cu∕Ti dual underlayer and controlling the substrate temperature during the sputter deposition. Under optimized conditions, the magnetic anisotropy constant reached 4.0×107erg∕cm3, and the coercivity and the remanence ratio in the direction perpendicular to the film surface were 12.0kOe and unity, respectively. The high perpendicular magnetic anisotropy is attributed to the high degree of preferred orientation of the c axis; the full width at half maximum in the rocking curve of SmCo5(002) reflection was 3.1°.