PETE: A device/circuit analysis framework for evaluation and comparison of charge based emerging devices

PETE: A device/circuit analysis framework for evaluation and comparison of charge based emerging devices
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PETE:用于评估和比较基于电荷的新兴器件的器件/电路分析框架

DOI:
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发表时间:
2009
期刊:
IEEE International Symposium on Quality Electronic Design
影响因子:
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通讯作者:
K. Roy
K. Roy
中科院分区:
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文献类型:
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作者:
C. Augustine;A. Raychowdhury;Yunfei Gao;Mark S. Lundstrom;K. Roy

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本文介绍了PETE,已开发的纳米级器件的电路/系统级评估的工具。开发此工具的动机是,传统的器件指标(如CV/Ion、Ioff或CV 2f)不再能捕捉半导体器件的真正潜力,也不再能低估或高估系统级性能。与此同时,为任何新设备开发和部署紧凑型模型都是一项耗时的工作,这项任务只能在开发潜力建立后才能完成。为此,我们开发了PETE,这样器件和电路设计人员就可以对任何新器件进行快速和合理准确的估计,而无需开发紧凑的模型。PETE的输入可以是数值I <$V和C <$V特性(来自实验或器件模拟),该工具可以对与逻辑门、环形振荡器和兆单元的性能和功率有关的各种电路/系统级指标进行数值评估。我们已经评估了四种新兴的器件技术,即15纳米硅MOSFET晶体管,多晶体管,带到带隧穿晶体管,和铁电FET与PETE和所获得的结果是在5%的水平的不准确性相比,传统的SPICE为基础的方法。PETE已部署在nanoHUB(nanohub.org)上供公众使用,其简单的Web界面确保即使是电路方面的非专家也可以获得性能-功率贸易新技术的准确估计。
This paper describes PETE, a tool that has been developed for circuit/system level evaluation of nanoscaled devices. The motivation behind developing this tool is the fact that traditional device metrics like CV/Ion, Ioff or CV2f can no longer capture the true potential of semiconductor devices and underestimate or overestimate system level performance. At the same time, the development and deployment of compact models for any new device is a time-consuming effort, a task that can only be undertaken once the potential of the de established. Towards this end, we have developed PETE, so that device and circuit designers can perform a fast and reasonably accurate estimation of any new device without having to develop compact models. The inputs to PETE can be numerical I¿V and C¿V characteristics (derived from experiments or device simulations), and the tool can numerically evaluate a wide array of circuit/system level metrics pertaining to performance and power of logic gates, ring oscillators and mega-cells. We have evaluated four emerging device technologies, namely, 15nm Silicon MOSFET transistors, Multi transistors, Band-to-band-tunneling transistors, and Ferroelectric FETs with PETE and the results obtained are within a 5% level of inaccuracy when compared to a traditional SPICE based approach. PETE has been deployed on the nanoHUB (nanohub.org) for public use, and its simple web interface ensures that even a non-expert in circuits can obtain accurate estimation of performance-power trade new technology.