Switching of Dye Loading Mechanism in Electrochemical Self-Assembly of CuSCN/DAS Hybrid Thin Films

Switching of Dye Loading Mechanism in Electrochemical Self-Assembly of CuSCN/DAS Hybrid Thin Films
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CuSCN/DAS 杂化薄膜电化学自组装中染料加载机制的切换

DOI:
10.1149/08801.0313ecst
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发表时间:
2018
期刊:
ECS Transactions
影响因子:
--
通讯作者:
Yoshida Tsukasa
Yoshida Tsukasa
中科院分区:
--
文献类型:
--
作者:
Tsuda Yuki;Nakamura Tenshou;Uda Kyota;Okada Shuji;Sun Lina;Suzuri Yoshiyuki;Stadler Philipp;Yoshida Tsukasa

文献摘要

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CuSCN/4-(N,N-二甲基氨基)-4'-(N'-甲基)芪唑(DAS)杂化薄膜的电化学自组装通过系统改变[Cu(SCN)]+、DAS甲苯磺酸盐(DAST)的体积浓度并通过旋转盘电极的旋转角速度改变其通量密度来进行。依赖于浴中 DAST 浓度的 DAS 加载机制的切换已得到验证和量化。切换发生在浓度比 [Cu (SCN)]+/DAST= ca 时。 40,高于该值,对于DAS被吸留在CuSCN颗粒中,负载变得扩散受限,而当DAST的相对浓度超过该边界时,CuSCN表面位点和DAS之间复合物形成的二级反应速率开始限制DAS负载,导致CuSCN和(DAS)(SCN)聚集在独特的纳米结构中的相分离沉淀。
Electrochemical self-assembly of CuSCN/4-(N, N-dimethylamino)-4’-(N’-methyl) stilbazolium (DAS) hybrid thin films has been carried out on systematic variation of bulk concentrations of [Cu (SCN)]+, DAS tosylate (DAST) and changing their flux density by angular speed of rotation of the rotating disk electrode. Switching of DAS loading mechanism dependent on the DAST concentration in the bath has been verified and quantified. The switching occurs at the concentration ratio [Cu (SCN)]+/DAST= ca. 40, above which the loading becomes diffusion limited for DAS to be occluded in the CuSCN grains, whereas the second order reaction rate of complex formation between CuSCN surface sites and DAS begins to limit the DAS loading when the relative concentration of DAST exceeds this border, resulting in a phase-separated precipitation of CuSCN and (DAS)(SCN) aggregate in unique nanostructures.