Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors
Interface structure and adhesion of wafer-bonded GaN/GaN and GaN/AlGaN semiconductors
复制标题
晶圆键合 GaN/GaN 和 GaN/AlGaN 半导体的界面结构和粘附力
DOI：
10.1063/1.1633980
复制
发表时间：
2004
影响因子：
3.2
通讯作者：
Bill Hoke
中科院分区：
文献类型：
--
作者：
F. Shi;K. Chang;K. Hsieh;L. Guido;Bill Hoke
本文报道了利用晶片键合技术实现GaN/GaN和Al0.25Ga0.75N/GaN半导体的材料集成。用扫描电子显微镜和能谱仪对晶片表面和界面微结构进行了表征。根据双悬臂梁技术测得的界面断裂能γ_o来估算界面结合强度。比较了几种不同晶片键合的III-V半导体的界面粘接性能。通过比较原子化学键能Eo和测量的界面断裂能γo，分析了几种主要的III-V半导体的成键性。
Material integrations of GaN/GaN and Al0.25Ga0.75N/GaN semiconductors through wafer bonding technology were reported in this work. The wafer surface and interface microstructures were characterized by scanning electron microscopy and energy dispersive x-ray spectroscopy. The interface adhesion (bonding strength) was estimated based upon the interface fracture energy γo measured by double-cantilever beam technique. The interface adhesion properties of several different wafer-bonded III-V semiconductors were also compared. By comparing the atomic chemical bond energy Eo with the measured interface fracture energy γo, the bondability of a few major III-V semiconductors was analyzed.