Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy

Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopy
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用电子能量损失谱研究氧化铝对硅表面的钝化

DOI：
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发表时间：
2013
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影响因子：
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通讯作者：
W. Kessels
W. Kessels
中科院分区：
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文献类型：
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作者：
B. Hoex;M. Bosman;N. Nandakumar;W. Kessels

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通过空间分辨电子能量损失光谱详细研究了 Al2O3 薄膜对晶体硅表面钝化的起源。研究了通过等离子体辅助和热原子层沉积在 c-Si 衬底上生长的沉积态和退火 Al2O3 薄膜中 Al 和 O 的键构。结果证实了界面 SiO2 类薄膜的存在，并证明了退火后薄膜中四面体和八面体配位 Al 的比例发生变化。这些观察揭示了 Al2O3 钝化 c-Si 表面的根本原因。 （© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
The origin behind crystalline silicon surface passivation by Al2O3 films is studied in detail by means of spatially‐resolved electron energy loss spectroscopy. The bonding configurations of Al and O are studied in as‐deposited and annealed Al2O3 films grown on c‐Si substrates by plasma‐assisted and thermal atomic layer deposition. The results confirm the presence of an interfacial SiO2‐like film and demonstrate changes in the ratio between tetrahedrally and octahedrally coordinated Al in the films after annealing. These observations reveal the underlying origin of c‐Si surface passivation by Al2O3. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)