In situ electrical impedance spectroscopy under high pressure on diamond anvil cell

In situ electrical impedance spectroscopy under high pressure on diamond anvil cell
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金刚石砧池高压下原位电阻抗光谱

DOI:
10.1063/1.2778760
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发表时间:
2007-08
影响因子:
4
通讯作者:
Gao Chunxiao
Gao Chunxiao
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Hao Aimin;Li Ming;Li Yanchun;Li Hui;Zou Guangtian;Ma Yanzhang;Huang Xiaowei;Yu Cuiling;He Chunyuan;Li Xiaodong;Zhang Dongmei;Liu Bingguo;Liu Jing;Gao Chunxiao

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晶界对电气传输特性的影响是一个基本的物理问题,也是材料科学和技术的主题。在高压下,原位对粉末状材料的电气测量提供了一个机会
The effect of grain boundary on electrical transportation properties is a basic physical problem and also a subject of material science and technology. In situ electrical measurement of powdered materials under high pressure provides a chance to figure out the electrical properties of grain boundaries. In this letter, the authors report an in situ impedance spectroscopy method used in conjunction with a diamond anvil cell for electrical property research of grain boundaries under high pressure. Powdered CdS was pressed up to 23GPa and an impedance arc corresponding to the grain boundary was detected. It was found that the electrical property of the grain boundary changed with pressure and could be determined by the resistance and the relaxation frequency. Pressure decreases the effective scattering section of the grain boundary to charge carriers, and finally leads to the decrease of resistance and activation energy of the grain boundary.
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