K.Agawa: "Electrical Properties of Heavily Si-deped Go As Grown on (311) A Go As Surfaces by Moleculay Beam Epitaxy." Procecdings of 20th Int'l Symp.Ga As and Related Compounds(to be published). (1994)
K.Agawa: "Electrical Properties of Heavily Si-deped Go As Grown on (311) A Go As Surfaces by Moleculay Beam Epitaxy." Procecdings of 20th Int'l Symp.Ga As and Related Compounds(to be published). (1994)
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K.Akawa：“通过分子束外延在 (311) A Go 表面生长的重硅沉积 Go 的电特性。”
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