ENERGY‐MOMENTUM TRANSPORT MODEL SUITABLE FOR SMALL GEOMETRY SILICON DEVICE SIMULATION
ENERGY‐MOMENTUM TRANSPORT MODEL SUITABLE FOR SMALL GEOMETRY SILICON DEVICE SIMULATION
复制标题
适用于小型硅器件仿真的能量动量输运模型
DOI：
10.1108/eb010322
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发表时间：
1990
影响因子：
0.7
通讯作者：
S. Chamberlain
中科院分区：
文献类型：
--
作者：
J. W. Roberts;S. Chamberlain
对亚微米硅器件的能量动量输运模型进行了修改，以包括新的一组简单的带间散射模型，这些模型代表了碰撞电离、俄歇复合、捕获和光生。这些都是使用简化的物理建模方法开发的。提出了一种适用于不规则空间网格的离散格式。所得模型适用于硅器件中小几何效应的研究。
An energy‐momentum transport model for sub‐micron silicon devices is modified to include new sets of simple interband scattering models representing impact ionization, auger recombination, trapping and photo generation. These have been developed using a simplified physical modelling approach. A discretization scheme suitable for application to an irregular spatial grid is presented. The resulting model is suitable for the study of small geometry effects in silicon devices.