Dependence of the radiative lifetime on the type-II band offset in GaAsxSb1－x/GaAs quantum dots including effects of photoexcited carriers
Dependence of the radiative lifetime on the type-II band offset in GaAsxSb1－x/GaAs quantum dots including effects of photoexcited carriers
复制标题
GaAsxSb1−x/GaAs 量子点中辐射寿命对 II 型能带偏移的依赖性，包括光激发载流子的影响
DOI：
10.1063/5.0105306
复制
发表时间：
2022
影响因子：
3.2
通讯作者：
Okada Yoshitaka
中科院分区：
文献类型：
--
作者：
Oteki Yusuke;Shoji Yasushi;Miyashita Naoya;Okada Yoshitaka
