Direct observation of excitonic Rabi oscillations in semiconductors
Direct observation of excitonic Rabi oscillations in semiconductors
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DOI：
10.1103/physrevlett.82.2346
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发表时间：
1999-03-15
影响因子：
8.6
通讯作者：
Peyghambarian, N
中科院分区：
文献类型：
--
作者：
Schülzgen, A;Binder, R;Peyghambarian, N
我们在半导体量子阱中观察到多个激子光学拉比振荡。在亚皮秒时间尺度上，观察到重空穴激子密度的八个振荡周期。建立了振荡频率对光场振幅的近似线性依赖关系。该实验是基于一个双色检测方案，允许通过在轻空穴激子的传输变化的重空穴激子密度的观察。观测结果与基于多带半导体Bloch方程的理论计算结果符合得很好。
We observe multiple excitonic optical Rabi oscillations in a semiconductor quantum well. Up to eight oscillation periods of the heavy-hole exciton density on a subpicosecond time scale are observed. An approximate linear dependence of the oscillation frequency on the light field amplitude is established. The experiment is based on a two-color detection scheme which allows for the observation of the heavy-hole exciton density via transmission changes at the light-hole exciton. The observations are in good agreement with theoretical computations based on multiband semiconductor Bloch equations.