Recent Progress in Thallium Bromide Gamma-Ray Spectrometer Development
Recent Progress in Thallium Bromide Gamma-Ray Spectrometer Development
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DOI：
10.1109/tns.2011.2173503
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发表时间：
2012-01
影响因子：
1.8
通讯作者：
Hadong Kim;Alireza Kargar;L. Cirignano;A. Churilov;G. Ciampi;W. Higgins;F. Olschner;K. Shah
中科院分区：
文献类型：
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作者：
Hadong Kim;Alireza Kargar;L. Cirignano;A. Churilov;G. Ciampi;W. Higgins;F. Olschner;K. Shah
近年来，加工和晶体生长方法的进步导致溴化铊（TlBr）中电子的迁移率-寿命积显著增加。这使得能够制造厚度大于1 cm的单载流子收集器件。在本文中，我们报告了我们的最新结果，从像素化设备与深度校正，以及我们的初步结果与弗里施衣领设备。在应用深度校正后，从在-18 ° C和在连续偏压和照射下操作超过一个月的13-mm厚的TlBr阵列获得约2%的能量分辨率（在662 keV处的FWHM）。在室温下，用8.4毫米厚的TlBr弗里希领装置获得2.4%的能量分辨率。
In recent years, progress in processing and crystal growth methods have led to a significant increase in the mobility-lifetime product of electrons in thallium bromide (TlBr). This has enabled single carrier collection devices with thickness greater than 1-cm to be fabricated. In this paper we report on our latest results from pixellated devices with depth correction as well as our initial results with Frisch collar devices. After applying depth corrections, energy resolution of approximately 2% (FWHM at 662 keV) was obtained from a 13-mm thick TlBr array operated at -18°C and under continuous bias and irradiation for more than one month. Energy resolution of 2.4% was obtained at room temperature with an 8.4-mm thick TlBr Frisch collar device.